| 摘要 |
A solid-state memory such as a ferroelectric random access memory (FeRAM) with multiplexed internal data bus and reduced power consumption on data transfer. The memory stores data in the form of multi-byte data words with error correction coding (ECC). In a page mode read/write operation, data states stored in memory cells of the selected row are sensed by sense amplifiers arranged in first and second banks, which are associated with first and second groups of columns. The first bank of sense amplifiers, associated with the first group of columns and containing the ECC value, are coupled to to the internal bus, followed by coupling the second bank of sense amplifiers associated with the second group of columns to the internal bus. The internal bus is then placed in tri-state, following which the internal data bus is driven with data to be written into the second group of columns in that same row, that data latched into the second bank of sense amplifiers. The internal bus is then driven with the data to be written to the first group of columns in the row, and latched into the first bank of sense amplifiers. To the extent that the data in the second group of columns does not change from the read to write operations, power consumption otherwise necessary for switching the internal bus is avoided. |
