| 摘要 |
PURPOSE: An oxide semiconductor film and a semiconductor device are provided to produce stable electrical characteristics by using the oxide semiconductor film which contains indium, gallium, and zinc. CONSTITUTION: An oxide semiconductor film(101) contains indium(In), gallium(Ga), and zinc(Zn). The oxide semiconductor film includes crystal region(102) oriented to a c axis corresponding to a direction which is parallel to a normal vector of a side in which the oxide semiconductor film is formed The composition of the crystal region oriented to the c axis is expressed in In1+&dgr;Ga1-&dgr;O3(ZnO)m(0<&dgr;<1 and m=1 or 3). The composition of the oxide semiconductor film is expressed in InxGayO3(ZnO)m(0<x<2, 0<y<2, and m=1 or 3). |
