发明名称 |
Integrating the formation of I/O and core MOS devices with MOS capacitors and resistors |
摘要 |
An integrated circuit structure includes a semiconductor substrate, and a first and a second MOS device. The first MOS device includes a first gate dielectric over the semiconductor substrate, wherein the first gate dielectric is planar; and a first gate electrode over the first gate dielectric. The second MOS device includes a second gate dielectric over the semiconductor substrate; and a second gate electrode over the second gate dielectric. The second gate electrode has a height greater than a height of the first gate electrode. The second gate dielectric includes a planar portion underlying the second gate electrode, and sidewall portions extending on sidewalls of the second gate electrode. |
申请公布号 |
US8294216(B2) |
申请公布日期 |
2012.10.23 |
申请号 |
US20080191817 |
申请日期 |
2008.08.14 |
申请人 |
CHUANG HARRY;LIANG MONG SONG;YANG WEN-CHIH;CHEN CHIEN-LIANG;LI CHII-HORNG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHUANG HARRY;LIANG MONG SONG;YANG WEN-CHIH;CHEN CHIEN-LIANG;LI CHII-HORNG |
分类号 |
H01L27/11 |
主分类号 |
H01L27/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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