发明名称 |
Integrated circuit device and method for its production |
摘要 |
An integrated circuit device includes a semiconductor body fitted with a first electrode and a second electrode on opposite surfaces. A control electrode on an insulating layer controls channel regions of body zones for a current flow between the two electrodes. A drift section adjoining the channel regions comprises drift zones and charge compensation zones. A part of the charge compensation zones includes conductively connected charge compensation zones electrically connected to the first electrode. Another part includes nearly-floating charge compensation zones, so that an increased control electrode surface has a monolithically integrated additional capacitance CZGD in a cell region of the semiconductor device. |
申请公布号 |
US8294206(B2) |
申请公布日期 |
2012.10.23 |
申请号 |
US201113161130 |
申请日期 |
2011.06.15 |
申请人 |
WILLMEROTH ARMIN;KAINDL WINFRIED;TOLKSDORF CAROLIN;RUEB MICHAEL;INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
WILLMEROTH ARMIN;KAINDL WINFRIED;TOLKSDORF CAROLIN;RUEB MICHAEL |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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