SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to produce a semiconductor device optimized for high integration by forming a filling semiconductor pattern within an opening. CONSTITUTION: An impurity region(112) is formed on a substrate. A dielectric layer(120) having an opening(122) exposing the impurity region is formed on the top of the substrate. A monocrystal buffer semiconductor pattern is formed within the opening. A filling semiconductor pattern is formed within the opening by performing an epitaxial process using a buffer semiconductor pattern as a seed film.