发明名称 |
Method for forming silicide contacts |
摘要 |
Contacts having different characteristics may be created by forming a first silicide layer over a first device region of a substrate, and then forming a second silicide layer over a second device region while simultaneously further forming the first silicide layer. A first contact hole may be formed in a dielectric layer over a first device region of a substrate. A silicide layer may then be formed in the first contact hole. A second contact hole may be formed after the first contact hole and silicide layer is formed. A second silicidation may then be performed in the first and second contact holes. |
申请公布号 |
US8294220(B2) |
申请公布日期 |
2012.10.23 |
申请号 |
US20100685265 |
申请日期 |
2010.01.11 |
申请人 |
KIM HYUN-SU;MOON KWANG-JIN;LEE SANG-WOO;LEE EUN-OK;LEE HO-KI;SAMSUNG ELECTRONICS CO. LTD. |
发明人 |
KIM HYUN-SU;MOON KWANG-JIN;LEE SANG-WOO;LEE EUN-OK;LEE HO-KI |
分类号 |
H01L23/50 |
主分类号 |
H01L23/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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