| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting thyristor in which variation in the amount of emitted light due to temperature variation is reduced when compared with a case where the whole gate layer functions as a luminous layer, and to provide a light source head and an image forming apparatus. <P>SOLUTION: In the light-emitting thyristor 100 having an RC structure, a gate layer 108 is laminated between a p-type AlGaAs-based DBR layer 106 functioning as an anode layer, and an n-type AlGaAs-based DBR layer 112 functioning as a cathode layer. The luminous layer is a p-type AlGaAs-based luminous layer 108B having a small band gap, and the remaining gate layer 108 is an n-type AlGaAs-based DBR gate layer 108A having a band gap (average value of band gaps of respective DBR layers) larger than that of the luminous layer 108B. <P>COPYRIGHT: (C)2013,JPO&INPIT |
