MAGNETIC STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a magnetic storage device capable of suppressing that a memory cell or an MTJ element becomes defective and suppressing increase in manufacturing cost.

SOLUTION: A magnetic storage device according to an embodiment has: a source region and a drain region provided to a semiconductor layer so as to be separated from each other; a gate insulating film provided on the semiconductor layer between the source region and the drain region; a gate electrode provided on the gate insulating film; a source electrode and a drain electrode provided to the source region and the drain region, respectively; a first lamination structure provided on one of the source electrode and the drain electrode and at least having first and second ferromagnetic layers and an insulating tunnel barrier layer provided between the first and second ferromagnetic layers; and a contact plug provided on the other of the source electrode and the drain electrode and at least having a layer formed of the same material as the first and second ferromagnetic layers and having substantially the same height as that of the first lamination structure.

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