| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resistance change memory capable of sufficiently suppressing a sneak current flowing through a non-selection memory cell without installing a selector in the memory cell. <P>SOLUTION: A resistance change memory includes a memory cell MC having a first electrode 1a, a second electrode 1b, and a variable resistance layer 1c disposed between the first and second electrodes 1a and 1b. The memory cell MC has at least three states. The resistance change memory further includes a control circuit 2 that applies a voltage between the first and second electrodes 1a and 1b to perform writing, deleting, and reading. The control circuit 2 provides a first voltage pulse between the first and second electrodes 1a and 1b during a writing operation. After providing the first voltage pulse, the control circuit 2 provides a second voltage pulse of which polarity is different from that of the first voltage pulse. <P>COPYRIGHT: (C)2013,JPO&INPIT |
