| 摘要 |
The invention provides a manufacturing method for a semiconductor chip built-in wiring board, wherein the connection reliability of the semiconductor chip built-in wiring board is improved, the processing is simplified and the manufacturing time is shortened. Specifically, in a stacked step, a semiconductor chip (50) of a column-shaped bump made of Aus arranged on an electrode (51a) and a thermo-hardening resin film (21b) for forming a pad (31) via a thermoplastic resin film (22b) are arranged on opposing directions. In addition, in a pressurized heating step, the pad (31) and a pad bump (52a), the electrode (51a) and the pad bump (52a) are bonded together by solid phase diffusion so as to form the an alloy layer by Au of the pad bump (52a) and Cu of the pad (31), that is Cu-Au alloy layer (522). |
