发明名称 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a technology of minimizing damage on the mounting table surface when cleaning a plasma processing apparatus of a substrate by means of plasma without using a dummy substrate. <P>SOLUTION: After plasma etching treatment, interior of the vacuum vessel 1 in a plasma etching apparatus is cleaned by means of plasma P while exposing the surface of a susceptor 3, and reaction products A adhering to the interior of the vacuum vessel 1 are removed. At this time, a DC voltage is applied to the plasma P. Since ion energy of the plasma P can be reduced while obtaining high density plasma P, damage on the surface of the susceptor 3 can be minimized while performing a good cleaning. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012204644(A) 申请公布日期 2012.10.22
申请号 JP20110068370 申请日期 2011.03.25
申请人 TOKYO ELECTRON LTD 发明人 MURAKAMI TAKAHIRO
分类号 H01L21/3065 主分类号 H01L21/3065
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