| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an image sensor with a large dynamic range. <P>SOLUTION: Each pixel includes at least one photodiode PHD, a charge storage node 18, an electron multiplication amplification structure AMP, means TR1 for transferring electrons from the photodiode to the amplification structure, means TR2 for transferring electrons from the amplification structure to the storage node after multiplication, and a transistor RS for reinitializing the potential of the storage node. The pixels are read by a reading circuit which samples the potential of the charge storage node after reinitialization and after transfer of the electrons into the storage node and which provides a corresponding illumination measurement. The sensor furthermore includes means for carrying out the integration of charge in two different durations in the course of one and the same frame, and for giving the amplification structure different multiplication factors for the plurality of charges integrated in the course of these durations. An illumination measurement corresponding to the first factor or to the second factor is selected pixel by pixel as a function of the illumination of the pixel. <P>COPYRIGHT: (C)2013,JPO&INPIT |
