| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce crystal defect (slip) in a bonded interface, which is produced at the time of a bonding heat treatment in manufacturing of a thick BOX-SOI wafer, and to reduce warp occurring in the SOI wafer. <P>SOLUTION: A bonded SOI wafer 18 manufacturing method of the present invention comprises in the following order: an oxide film formation process of forming each oxide film such that a thickness of an oxide film 12a formed on a surface of a support wafer 12 is larger than a thickness of an oxide film 11a formed on a surface of an active layer wafer 11; a plasma processing process of performing plasma processing on a bonding surface of at least either one of the active layer wafer or the support wafer before bonding; a bonding process of overlapping two wafers via an oxide film to tightly adhere to each other; an SOI layer formation process of forming an SOI layer by subjecting the active layer wafer of the bonded wafer to thinning processing to thin the active layer wafer; and a bonding enforcement heat treatment process of performing a heat treatment on the bonded wafer after the SOI layer formation process to increase a bonding strength. <P>COPYRIGHT: (C)2013,JPO&INPIT |
