SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that allows the formation of a nitride semiconductor layer with low dislocation and evenness on a substrate having irregularity on its surface, and to provide a method of manufacturing the same.

SOLUTION: A semiconductor device comprises: a substrate that has an uneven structure on its primary surface; a nitride layer of at least either of polycrystal and non-crystal that is formed on the entire primary surface and in which at least either of a p-type impurity and an n-type impurity is doped; and a nitride semiconductor layer that is provided on the nitride layer.

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