发明名称 SUBSTRATE PROCESSING SYSTEM, AND HEAT REUSE METHOD IN SUBSTRATE PROCESSING SYSTEM
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate processing system capable of preventing reduction in a degree of freedom of arrangement for each component. <P>SOLUTION: A semiconductor device manufacturing system 10 has: a heat treatment device 12 processing a wafer W at a high temperature; a cleaning device 13 processing the wafer W at a low temperature; and a heat storage module 14 attachable/detachable to/from the heat treatment device 12 and the cleaning device 13, and to which a high-temperature cooling gas is supplied when connected with the heat treatment device 12, and to which a low-temperature heating gas is supplied when connected with the cleaning device 13. The heat storage module 14 incorporates a heat storage material 52 impregnated with a phase change material 57. In the case that the temperature of the supplied high-temperature cooling gas is higher than a temperature of the phase change material 57, the phase change material 57 receives heat energy from the high-temperature cooling gas and stores it, and in the case that the temperature of the supplied low-temperature heating gas is lower than the temperature of the phase change material 57, the phase change material 57 delivers the stored heat energy to the low-temperature heating gas. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012204649(A) 申请公布日期 2012.10.22
申请号 JP20110068472 申请日期 2011.03.25
申请人 TOKYO ELECTRON LTD 发明人 BAKU KUMO;NAGASEKI SUMIE;MATSUZAKI KAZUYOSHI;KAWAKAMI MASAHITO
分类号 H01L21/02;F28D20/00;H01L21/304 主分类号 H01L21/02
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