| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a spin conduction element in which the surface resistance of a tunnel layer is decreased, and to provide a magnetic head. <P>SOLUTION: The spin conduction element (magnetic sensor 1)includes a channel layer 10 composed of a semiconductor, ferromagnetic layers 20A, 20B formed on the channel layer 10, and tunnel layers 22A, 22B formed to be interposed between the channel layer 10 and the ferromagnetic layers 20A, 20B. The tunnel layers 22A, 22B are composed of such a material as a part of Mg in MgO is replaced by Zn. According to the study of the inventor, a decrease in the surface resistance is observed in a tunnel material where a part of Mg in MgO is replaced by Zn. Surface resistance of the tunnel layers 22A, 22B can thereby be decreased by composing the tunnel layers 22A, 22B of a material where a part of Mg in MgO is replaced by Zn. <P>COPYRIGHT: (C)2013,JPO&INPIT |
