| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide single crystal capable of lowering greatly a growing temperature of the silicon carbide single crystal, and heightening greatly growing speed. <P>SOLUTION: In a method for growing a silicon carbide single crystal on a planar silicon carbide seed crystal by heating a mixture of silicon oxide and carbon, the mixture contains particles in which the silicon oxide has a contact inside with the carbon. Preferably, the nitrogen adsorption specific surface area of the mixture is ≤70% of the nitrogen adsorption specific surface area of the silicon oxide obtained by removing carbon from the mixture, and the nitrogen adsorption specific surface area of the silicon oxide is ≥50 m<SP POS="POST">2</SP>/g. In one embodiment, metal silicon is mixed with the mixture, and the metal silicon in the molten state is brought into contact with the silicon carbide seed crystal. In another embodiment, metal silicon is brought into contact with the planar silicon carbide seed crystal to be arranged in the layered state, and a silicon carbide single crystal is grown on the silicon carbide seed crystal through the layered metal silicon in the molten state. <P>COPYRIGHT: (C)2013,JPO&INPIT |
