| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a production method of a cubic crystal silicon carbide film which allows isotropic growth of a cubic crystal silicon carbide by maintaining such a growth rate as the lateral growth rate in lateral crystal growth is equivalent to the longitudinal growth rate, and allows formation of a cubic crystal silicon carbide film having a wider low defect region. <P>SOLUTION: The production method of a cubic crystal silicon carbide film includes a step for forming a cubic crystal silicon carbide layer 11 on the surface 2a of a silicon substrate 2, a step for removing the cubic crystal silicon carbide layer 11 selectively and forming a cubic crystal silicon carbide seed layer 11a of a desired pattern where the crystal orientation surface of the crystal growth region becomes the ä100} plane, and a step for growing a cubic crystal silicon carbide on the cubic crystal silicon carbide seed layer 11a. <P>COPYRIGHT: (C)2013,JPO&INPIT |
