| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve an operation margin of a memory. <P>SOLUTION: A resistance change type memory comprises: a memory cell MC containing a first cell SCA connected to bit lines BLA and BLC, and a second cell SCB connected to bit lines BLB and BLC; a memory element 8A and a selection transistor TrA forming the first cell SCA; and a memory element 8B and a selection transistor TrB forming the second cell SCB. While a word line is being activated during a writing operation for the memory cell, the 2 memory elements 8A and 8B in the memory cell MC are changed to a first resistance state, and then one of the 2 memory elements 8A and 8B is changed to a second resistance state. <P>COPYRIGHT: (C)2013,JPO&INPIT |
