| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reflection protective sheet and a method of manufacturing the same capable of improving a power generation efficiency of a semiconductor power generation device and having a sufficient resistance against thermal influences, and to provide a semiconductor power generation device having the reflection protective sheet. <P>SOLUTION: A reflection protective sheet 5 has: a transmission layer 51 formed of a translucent material; a reflection structure layer 57 arranged on a rear face side of the transmission layer 51 and having a reflection function for reflecting light incoming from the transmission layer 51 side; an intermediate layer 55 arranged on a rear face side of the reflection structure layer 57; and an outer layer 56 arranged on a rear face side of the intermediate layer 55. The reflection structure layer 57 is configured by a reflection film 54, an uneven layer 53 formed of a translucent material and arranged on a front face side of the reflection film 54, and a contact holding layer 52 formed of a translucent material and arranged on a front face side of the uneven layer 53. The uneven layer 53 is configured by regularly arranging a plurality of uneven structures 53a on the rear face of the contact holding layer 52. The reflection film 54 is formed along the rear face of the uneven structures 53a. A thickness of the contact holding layer 52 is 1-50 μm. <P>COPYRIGHT: (C)2013,JPO&INPIT |
