SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR ELEMENT FORMATION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element using germanium as a channel material and having a source/drain structure of metal/germanium.

SOLUTION: In a semiconductor element in which a source/drain structure is formed by junction of a semiconductor and a metal, p-type germanium (or n-type germanium) obtained by doping of germanium (Ge) with triad (or quinquevalent element) is used as a material of a channel 2, and a metal 3 having a crystal surface of an atomic position the same as an atomic position of any crystal surface of the p-type germanium (or n-type germanium) is joined by the crystal surface of the same atomic position to form a boundary surface. Accordingly, the source/drain structure by using the formed boundary surface is obtained.

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