| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a surface processing method of a semiconductor substrate capable of oxidizing a surface of a substrate for silylation with a stably strong oxidation power, and to provide a substrate processing device. <P>SOLUTION: A surface processing method of a semiconductor substrate comprises: a step of electrolyzing sulfuric acid to generate an oxidizing solution; and a step of generating an oxide film on a surface of the semiconductor substrate using the oxidizing solution. The surface of the semiconductor substrate is oxidized to generate an OH group using the oxidizing solution and a silylation agent is supplied to the surface of the semiconductor substrate. Then the OH group generated by oxidizing the surface of the semiconductor substrate is combined with an OH group obtained by hydrolyzing an organic material contained in the silylation agent to cause a dehydration condensation reaction. As a result of this reaction, the surface of the semiconductor substrate is hydrophobized. <P>COPYRIGHT: (C)2013,JPO&INPIT |
