METHOD OF MANUFACTURING NONVOLATILE SEMICONDUCTOR STORAGE DEVICE, AND NONVOLATILE SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a nonvolatile semiconductor storage device and a nonvolatile semiconductor storage device capable of eliminating a step on a gate electrode without providing a planarization processing step using a liner film as a stopper film.

SOLUTION: The method includes the steps of: forming inter-stacked gate insulating films 8 and 9 between stacked gate electrodes MG of a memory cell transistor and between stacked gate electrodes SGD of a selection gate electrode so that an upper end is substantially accorded with or lower than a contact interface between a cap film and a silicon layer 6 of a second gate electrode; forming a liner film 10; forming a first insulating film 11 on the liner film 10 between the selection gate electrodes SGD; performing etching processing of the liner film 10 and the cap film; etching the first insulating film 11 and the inter-stacked gate insulating films 8 and 9 to substantially accord the upper surface of the first insulating film 11 with the upper surface height of the second gate electrode 6; and forming a silicide layer 7 to an upper part of the silicon layer 6 of the second gate electrode.

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