| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device having high reliability, high speed access and operation current reduction. <P>SOLUTION: In a majority mode, the same write data is written in a plurality of RAMs 0-0, 1-0 and 2-0 or RAMs 0-1, 1-1 and 2-1, and in an ECC mode, write data with an ECC code added is written in any of the plurality of RAMs 0-0, 1-0, 2-0, 0-1, 1-1 and 2-1. The semiconductor storage device includes a majority circuit 16 for outputting a majority result of data written in the plurality of RAMs during reading in the majority mode, ECC generation circuits 12-1 to 12-3 for generating an ECC code for write data during writing in the ECC mode, and ECC error correction circuits 14-1 to 14-3 for executing error correction of write data with the ECC code added stored in the RAMs during reading in the ECC mode. <P>COPYRIGHT: (C)2013,JPO&INPIT |
