| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composition capable of forming a resist underlayer film having a high refractive index and an absorbancy index and having high etching selectivity to a resist film in dry etching, and to provide a resist underlayer film to be formed and a pattern formation method using the composition. <P>SOLUTION: (A) The composition for forming a resist underlayer film includes a polymer including a structural unit (I) derived from a compound represented by following formula (1). (In the formula (1), R<SP POS="POST">1</SP>and R<SP POS="POST">2</SP>are an organic group each independently including hydrogen atoms, halogen atoms, a hydrocarbon group with the carbon number of 1 to 20, or an epoxy group. R<SP POS="POST">3</SP>is -CO- or CR<SP POS="POST">4</SP>R<SP POS="POST">5</SP>. R<SP POS="POST">4</SP>and R<SP POS="POST">5</SP>are each independently hydrogen atoms, halogen atoms, a hydroxyl group, and a hydrocarbon group with the carbon number of 1 to 10. Where, a part or all of hydrogen atoms of the hydrocarbon group may be substituted.) <P>COPYRIGHT: (C)2013,JPO&INPIT |
