| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a power semiconductor device that is excellent in reverse recovery characteristics and has a low forward voltage and a small reverse leakage current. <P>SOLUTION: A power semiconductor device comprises: a first semiconductor layer 1 of a first conductivity type; a second semiconductor layer 2 of the first conductivity type; a third semiconductor layer 3 of a second conductivity type; a fourth semiconductor layer 4 of the second conductivity type; a first main electrode 5; and a second main electrode 6. The second semiconductor layer 2 is provided on the first semiconductor layer 1, and the third semiconductor layer 3 is selectively provided on a surface of the second semiconductor layer 2. The fourth semiconductor layer 4 is selectively provided on a surface of the third semiconductor layer 3 and has a higher concentration of a second-conductivity-type impurity than that of the second conductivity-type impurity of the third semiconductor layer 3. The third semiconductor layer 3 has a carrier-lifetime reducing region that is adjacent to the bottom surface of the fourth semiconductor layer 4, is spaced apart from the second semiconductor layer 2, and is processed so that the carrier lifetime becomes shorter. <P>COPYRIGHT: (C)2013,JPO&INPIT |
