发明名称 ION IMPLANTED RESIST STRIP WITH SUPERACID
摘要 <P>PROBLEM TO BE SOLVED: To provide a method, a device, and a chemical substance for minimizing the effects of undesirable chemical changes to a resist when removing an ion implanted resist. <P>SOLUTION: The method is a method to remove at least one of carbonized materials and organic materials from a semiconductor structure, in which the semiconductor structure is contacted with a superacid composition containing a superacid species. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012203411(A) 申请公布日期 2012.10.22
申请号 JP20120011468 申请日期 2012.01.23
申请人 TOSHIBA CORP 发明人 UOZUMI NOBUHIRO
分类号 G03F7/42;H01L21/027;H01L21/304 主分类号 G03F7/42
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