| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a bit line is linear and a cell transistor in a longitudinal direction is parallel with a bit line direction, and further, the bit line is wired on a location overlapping the cell transistor when viewed from above. <P>SOLUTION: A semiconductor device comprises: a bit line BL provided on a top face of first and second contact plugs 6a, 6b via a first insulation layer 10a and extending in a direction linking a first impurity diffusion layer 4a and a second impurity diffusion layer 4b; a bit line contact plug provided to penetrate the first insulation layer 10a and electrically connecting the bit line BL with the first contact plug 6a; a first cell capacitor having a first lower electrode 7a at a location lateral to one lateral face side of the bit line BL; a first insulation film 8a insulating the bit line BL and the first lower electrode 7a; and a first contact conductor 9a electrically connecting a lower end of the first lower electrode 7a with a lateral face of the second contact plug 6b. <P>COPYRIGHT: (C)2013,JPO&INPIT |
