| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a method for analyzing a defect of a mask blank, which is capable of accurately specifying which process a defect occurred during formation of a thin film for pattern formation in. <P>SOLUTION: The method for analyzing a defect of a mask blank on which the existence of foreign matters has been confirmed by inspecting a thin film formed on a substrate includes: a step of observing a shape of the foreign matters with a surface of the thin film exposed, by using a scanning electron microscope; a step of removing the foreign matters; a step of measuring a depth of a concave portion formed on the surface of the thin film due to removal of the foreign matters, by using a scanning probe microscope; and a step of specifying a period when the foreign matters were deposited in a process for forming the thin film, in accordance with the shape of the foreign matters and the depth of the concave portion. <P>COPYRIGHT: (C)2013,JPO&INPIT |
