| 发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can decrease warpage of a semiconductor substrate caused by film formation. <P>SOLUTION: A mask material 18 for ion implantation is formed on a principal surface of a SiC semiconductor substrate 10. The mask material has a thermal expansion coefficient different from that of the semiconductor substrate. A mask film 16 having a notch 16a on a region (dicing line) 14 between a plurality of device formation regions is formed by dry etching by using a resist film 20 as a mask. After performing processes such as ion implantation to form a semiconductor device, individual device formation regions are separated from one another along the dicing line. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2012204568(A) |
申请公布日期 |
2012.10.22 |
| 申请号 |
JP20110067143 |
申请日期 |
2011.03.25 |
| 申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
HATSUKAWA SATOSHI |
| 分类号 |
H01L21/02;H01L21/266;H01L21/3205;H01L21/337;H01L21/338;H01L21/768;H01L23/522;H01L27/098;H01L29/808;H01L29/812 |
主分类号 |
H01L21/02 |
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