| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress a dark current caused by stress of a metal light shielding film to perform black level correction more accurately. <P>SOLUTION: In a solid-state imaging element 1, an effective pixel array region 2 performing photoelectric conversion and imaging of incoming light from a subject is provided at a center part above a semiconductor substrate 6, and an optical black region 3 performing black level correction to an imaging signal from the effective pixel array region 2 is provided on an outer peripheral side of the effective pixel array region 2, and a peripheral circuit region 4 is provided on an outer peripheral side of the optical black region 3. In the solid-state imaging element 1, metal light shielding films 8a and 8b shielding the incoming light are provided to the optical black region 3 and the peripheral circuit region 4, and a slit part 5 for releasing stress is provided to the whole of a boundary between the metal light shielding films 8a and 8b in the optical black region 3 and the peripheral circuit region 4. A slit 5a is formed over an outer periphery of a plan-view rectangle of the effective pixel array region 2 and the optical black region 3 peripherally outside the effective pixel array region 2. <P>COPYRIGHT: (C)2013,JPO&INPIT |
