| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a photovoltaic device having a diffusion layer structure similar to a selective emitter structure capable of reducing connection resistance of a light reception face side electrode while increasing resistance of a light reception face, and excellent in photoelectric conversion efficiency. <P>SOLUTION: A photovoltaic device comprises a first conductive type single crystal silicon substrate 1, on one face of which an uneven shape is formed; a plurality of first diffusion layers 2a that are dispersed at a peak part of a convex part of the uneven shape on an entire face on one side of the single crystal silicon substrate 1, and on which second conductive type impure elements are diffused at a first concentration; second diffusion layers 5 that are formed in a region other than the first diffusion layers 2a on one side of the single crystal silicon substrate 1, and on which the second conductive type impure elements are diffused at a second concentration lower than the first concentration; light reception face side electrodes 7 electrically connected to the first diffusion layers 2a and formed on one side of the single crystal silicon substrate 1; and a rear face side electrode 8 formed on the other side of the single crystal silicon substrate 1. <P>COPYRIGHT: (C)2013,JPO&INPIT |
