发明名称 IMAGE SENSOR WITH DOUBLE INTEGRATION TIME AND CONDITIONAL SELECTION
摘要 <P>PROBLEM TO BE SOLVED: To provide an image sensor with double integration time and conditional selection. <P>SOLUTION: A first transfer and a second transfer from a photodiode to a storage node are performed respectively after first duration (Ti1) and after second duration (Ti2) different from the first duration. The potential of the storage node after the first transfer of charge is sampled (shs1) in a first capacitor of a reading circuit, and the potential after a reinitialization of the storage node is sampled (shr) in a second capacitor. A level of potential taken after the second transfer is conditionally resampled (shs2) in the first capacitor. A signal level after the first transfer is applied to a differential amplifier of a ramp-type converter for short ramp duration (RMP1). It is determined whether resampling is performed according to a state of output of the amplifier at completion. Definitive analog-digital conversion using a definitive ramp (RMP2) of a differential signal level sampled in the capacitor is completed. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012205308(A) 申请公布日期 2012.10.22
申请号 JP20120065783 申请日期 2012.03.22
申请人 E2V SEMICONDUCTORS 发明人 ANDY NOIRET;THIERRY LIGOZAT
分类号 H04N5/378;H04N5/355 主分类号 H04N5/378
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