发明名称 APPARATUS FOR MANUFACTURING SILICON SINGLE CRYSTAL INGOT
摘要 PURPOSE: An apparatus for manufacturing a silicon single crystal ingot is provided to prevent heat dissipation to the outside by arranging a reflecting portion at a circumference of a heating portion. CONSTITUTION: A crucible(10) receives silicon. The crucible is included inside a chamber. A heating portion(20) heats the silicon. An upper insulation portion(32) is arranged on the top of the crucible and shields heat from the heating portion. A reflecting portion(80) is arranged at the outside of the heating portion.
申请公布号 KR20120116133(A) 申请公布日期 2012.10.22
申请号 KR20110033699 申请日期 2011.04.12
申请人 LG SILTRON INCORPORATED 发明人 LEE, SANG HOON;OH, HYUN JUNG;LEE, JAE EUN;LEE, JAE HUN;KIM, SOO YUL
分类号 C30B15/00;C30B29/06;H01L21/02 主分类号 C30B15/00
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