发明名称 |
APPARATUS FOR MANUFACTURING SILICON SINGLE CRYSTAL INGOT |
摘要 |
PURPOSE: An apparatus for manufacturing a silicon single crystal ingot is provided to prevent heat dissipation to the outside by arranging a reflecting portion at a circumference of a heating portion. CONSTITUTION: A crucible(10) receives silicon. The crucible is included inside a chamber. A heating portion(20) heats the silicon. An upper insulation portion(32) is arranged on the top of the crucible and shields heat from the heating portion. A reflecting portion(80) is arranged at the outside of the heating portion.
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申请公布号 |
KR20120116133(A) |
申请公布日期 |
2012.10.22 |
申请号 |
KR20110033699 |
申请日期 |
2011.04.12 |
申请人 |
LG SILTRON INCORPORATED |
发明人 |
LEE, SANG HOON;OH, HYUN JUNG;LEE, JAE EUN;LEE, JAE HUN;KIM, SOO YUL |
分类号 |
C30B15/00;C30B29/06;H01L21/02 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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