| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having suppressed leakage current. <P>SOLUTION: A semiconductor device comprises: a semiconductor layer of a first conductivity type; a plurality of trenches; an insulating layer; a conductive layer; a first semiconductor diffusion layer; and an anode electrode. The semiconductor layer is formed on a semiconductor substrate and has a second impurity concentration lower than a first impurity concentration. The plurality of trenches are formed in the semiconductor layer so as to extend downwardly from the top surface of the semiconductor layer. The conductive layer is formed so as to fill the trenches via the insulating layer and extends downwardly from the top surface of the semiconductor layer to a first position. The first semiconductor diffusion layer reaches to a second position from the top surface of the semiconductor layer located among the plurality of trenches and has a third impurity concentration lower than the second impurity concentration. The anode electrode is Schottky-coupled to the first semiconductor diffusion layer. The length from the top surface to the second position of the semiconductor layer is one-half or less of the length from the top surface to the first position of the semiconductor layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
