| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an insulated gate bipolar transistor in which the on voltage Vce(sat) is lowered, and lowering of the forward breakdown voltage is minimized. <P>SOLUTION: On the other surface of a first conductivity type semiconductor substrate (N-drift layer 114), a Schottky junction by the semiconductor substrate and a drain electrode (drain electrode 130) for causing conductivity modulation by injecting second conductivity type carriers (holes) into the first conductivity type semiconductor substrate when an insulated gate transistor is turned on is formed. At a position separated by a clearance X from the drain electrode to the source electrode (source electrode 128) side, a buffer layer (N+ buffer layer 132) having a first conductivity type second impurity concentration containing impurities at a higher concentration than that of the semiconductor substrate is formed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
