| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus and a method for producing a silicon carbide single crystal, capable of producing a lengthy single crystal having a high quality, and to provide a growth method thereof. <P>SOLUTION: In this apparatus for producing a silicon carbide single crystal including a guide member 7 for guiding raw material gas to the silicon carbide seed crystal 5 side, a crucible 3 comprises a crucible upper part 3a and a crucible lower part 3b which are relatively movable mutually in the vertical direction, and the guide member 7 comprises a guide member upper part 7a fixed to the crucible upper part 3a and a guide member lower part 7b fixed to the crucible lower part 3b, and a hole part 10 is provided at least on either of the guide member upper part 7a and the guide member lower part 7b, and the guide member upper part 7a and the guide member lower part 7b are arranged so that the hole part 10 is opened/closed according to relative movement of the crucible upper part 3a and the crucible lower part 3b. <P>COPYRIGHT: (C)2013,JPO&INPIT |
