NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To control the threshold voltage and obtain sufficient device characteristics in a normally-off field-effect transistor using a nitride semiconductor.

SOLUTION: A nitride semiconductor device comprises a semiconductor layer 101. The semiconductor layer 101 includes: a first region 121 that is composed of a nitride semiconductor crystal-grown in the c-axis direction and whose primary surface is a polar plane; a second region 122 that is formed thicker than the first region 121; and a third region 123 that is formed between the first region 121 and the second region 122 and whose primary surface is a semipolar plane. The nitride semiconductor device further comprises: a drain electrode 102 formed on the semiconductor layer 101 in the first region; a source electrode 103 formed on the semiconductor layer 101 in the second region 122; and a gate electrode 104 formed on the semiconductor layer 101 in the third region 123.

COPYRIGHT: (C)2013,JPO&INPIT