METHOD OF FORMING SELF-ALIGNED SILICIDE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR STRUCTURE

摘要

PROBLEM TO BE SOLVED: To suppress increase in the number of manufacturing steps, and to prevent increase in a contact resistance and an interfacial resistance.

SOLUTION: A silicon layer is formed after manufacturing of a functional gate electrode using a gate-last scheme. An initial semiconductor structure has: at least one impurity region formed on a semiconductor substrate; a sacrificial film formed on the impurity region; an insulating layer formed on the sacrificial film; and an insulating layer formed on the insulating layer. A via hole is patterned to the insulating layer of the initial semiconductor structure so as to penetrate through the thickness of the insulating layer so that a contact opening is formed to the insulating layer. Next, the sacrificial film located under the insulating layer is removed while remaining an air gap under the insulating layer. Next, a metal silicide precursor is arranged in the air gap space. The metal silicide precursor is transformed into a silicide layer through an annealing process.

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