METHOD FOR MANUFACTURING TUNNEL TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a tunnel transistor by self-alignment in one lithography step.

SOLUTION: A method for manufacturing a tunnel transistor comprises: a step of forming a first insulating film on a semiconductor substrate on which a gate insulating film and a gate electrode are laminated and then forming a second insulating film whose chemical selectivity differs from the first insulating film and which defines a gate electrode position at the edge of the first insulating film by lithography; a step of defining one end of the gate electrode using the first and second insulating films as a mask; a step of introducing a first conductivity-type impurity into the semiconductor substrate to form a source using the first and second insulating films as the mask; a step of coating a third insulating film whose chemical selectivity differs from the first insulating film on the whole surface of the semiconductor substrate; a step of selectively removing the first insulating film by removing a part of the third insulating film; and a step of forming a gate electrode using the second and third insulating films as the mask and then introducing a second conductivity-type impurity into the semiconductor substrate to form a drain.

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