| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a high-performance nitride semiconductor light-emitting element. <P>SOLUTION: A method of manufacturing a nitride semiconductor light-emitting element comprises the steps of: forming an n-type nitride semiconductor layer on a substrate; forming a light-emitting layer on the n-type nitride semiconductor layer; forming a p-type nitride semiconductor layer on the light-emitting layer; heat-treating the p-type nitride semiconductor layer at a first temperature in an atmosphere containing oxygen; and heat-treating the p-type nitride semiconductor layer, which is heat-treated at the first temperature, at a second temperature lower than the first temperature in a vacuum atmosphere. <P>COPYRIGHT: (C)2013,JPO&INPIT |
