发明名称 PROTECTIVE FILM FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a technology in which, on the surface of an alloy or the like containing Cr used for an SOFC, for example, a uniform protective film can be formed, in which the film thickness ratio of the rolling surface of a substrate of which the film thickness is further increased to the corner which is further thinned, in a manufacturing process. <P>SOLUTION: A protective film forming method forms the protective film on the surface of a substrate containing Cr used for a cell C for an SOFC. In the protective film forming method, a coating film forming process is performed, in which, on the surface of the substrate, a coating film is formed which is composed of a metal oxide particulate and a resin using a mixture between the metal oxide particulate and a resin composition, a calcination process is performed in which the substrate obtained by forming the coating film on the surface is put into a furnace in which the temperature is kept higher than the upper limit temperature allowing the resin to be softened and fluidized and kept in the resin burning-out temperature capable of combusting and removing the resin from the coating film, and a sintering process is performed in which the coating film obtained in the calcination process is sintered to form a protective film made of a metal oxide. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012204008(A) 申请公布日期 2012.10.22
申请号 JP20110064756 申请日期 2011.03.23
申请人 OSAKA GAS CO LTD 发明人 INOUE SHUICHI;NONAKA HIDEMASA;SAITO TEI;TAKUWA YUYA;YODA MASAKAZU
分类号 H01M8/02;C23C24/08;C25D13/00;C25D13/10;H01M8/12 主分类号 H01M8/02
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