| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting thyristor in which the probability of radiative recombination of carriers is enhanced when compared with the case where the present configuration is not employed, and to provide a light source head and an image forming apparatus. <P>SOLUTION: In the light-emitting thyristor 100, a gate layer 108 laminated between a p-type AlGaAs-based anode layer 106 and an n-type AlGaAs-based cathode layer 112 is configured so that an n-type AlGaAs-based trap layer 108A2 having a small band gap, a p-type AlGaAs-based DBR gate layer 108B1 having a large band gap, and a p-type AlGaAs-based luminous layer 108B0 having a small band gap are laminated in order from the p-type AlGaAs-based anode layer 106 side. <P>COPYRIGHT: (C)2013,JPO&INPIT |
