| 发明名称 |
SILICON CARBIDE SUBSTRATE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a large-sized silicon carbide substrate capable of manufacturing a semiconductor device with a high yield ratio. <P>SOLUTION: A first single crystal plate 11 has a first side surface and is made of silicon carbide. A second single crystal plate 12 has a second side surface opposing to the first side surface and is made of silicon carbide. A bonding part BD connects the first and the second side surfaces with each other, and is made of silicon carbide. At least a part of the bonding part BD has a polycrystalline structure. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2012201543(A) |
申请公布日期 |
2012.10.22 |
| 申请号 |
JP20110066916 |
申请日期 |
2011.03.25 |
| 申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
INOUE HIROKI;HARADA MAKOTO;HORI TSUTOMU;FUJIWARA SHINSUKE |
| 分类号 |
C30B33/06;C30B29/36;H01L21/02;H01L21/20;H01L21/336;H01L29/12;H01L29/78 |
主分类号 |
C30B33/06 |
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