| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce manufacturing cost of an LSI chip. <P>SOLUTION: A semiconductor device comprises: a semiconductor substrate; a plurality of LSI regions formed on the semiconductor substrate and equipped with a first power wiring layer including a first power wiring line; a first power terminal formed on the semiconductor substrate; and a second power wiring layer formed in a dicing line region among the LSI regions along dicing lines partitioning the LSI region and the dicing line region, and including a second power wiring line electrically connecting the first power wiring line and the first power terminal. At least in the LSI regions, a barrier metal film is formed at a boundary between the first power wiring line and the second power wiring line. <P>COPYRIGHT: (C)2013,JPO&INPIT |
