| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is improved in breakdown voltage while maintaining low ON resistance, and a method of manufacturing the same. <P>SOLUTION: The semiconductor device related to an embodiment includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a control electrode, a first main electrode, an internal electrode, and an insulation region. The control electrode is provided inside a trench. The first main electrode is electrically connected to the third semiconductor region, and provided outside the trench. The internal electrode is provided in the trench and electrically connected to the first main electrode. The insulation region is provided between an inner wall of the trench and the first main electrode, and between the inner wall of the trench and the internal electrode. The internal electrode includes a first internal electrode part included in a first region more on a bottom surface side of the trench than the control electrode, and a second internal electrode part included in a second region between the first region and the first main electrode. An interval between the first internal electrode part and the inner wall of the trench is wider than an interval between the second internal electrode part and the inner wall of the trench. <P>COPYRIGHT: (C)2013,JPO&INPIT |
