发明名称 |
METHOD OF DETERMINING CHARGE CARRIER CONCENTRATION PROFILE IN SEMICONDUCTOR QUANTUM-DIMENSIONAL STRUCTURE |
摘要 |
FIELD: physics. ^ SUBSTANCE: method of determining charge carrier concentration profile in a semiconductor quantum-dimensional structure involves measuring the luminescence spectrum at a low excitation level. The excitation level is then raised until there is energy shift of the emission line from recombination of quantum-dimensional, spatially confined charge carriers and the charge carrier concentration profile is determined from the value of the shift of the emission line using a self-consistent solution of Schrodinger and Poisson equations. ^ EFFECT: possibility of use in determining charge carrier concentration profile in a semiconductor quantum-dimensional structure. |
申请公布号 |
RU2464548(C1) |
申请公布日期 |
2012.10.20 |
申请号 |
RU20110119578 |
申请日期 |
2011.05.17 |
申请人 |
FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "RJAZANSKIJ GOSUDARSTVENNYJ RADIOTEKHNICHESKIJ UNIVERSITET" |
发明人 |
LITVINOV VLADIMIR GEORGIEVICH;MILOVANOVA OKSANA ALEKSANDROVNA;RYBIN NIKOLAJ BORISOVICH |
分类号 |
G01N21/63 |
主分类号 |
G01N21/63 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|