MANUFACTURING METHOD FOR THIN FILM OF POLY-CRYSTALLINE SILICON

摘要

PURPOSE: A method for manufacturing a polycrystalline silicon thin film is provided to improve productivity by sufficiently supplying heat to a chemical reactant. CONSTITUTION: A metal oxide layer is formed by thermally processing a catalyst layer. A first silicon layer is formed by laminating an amorphous silicon layer on the metal oxide layer. A metal silicide oxide layer(45) is formed by moving catalyst metal elements from the catalyst layer to the first silicon layer. A second silicon layer(50) is formed by laminating the amorphous silicon layer on the metal silicide oxide layer. Crystalline silicon is generated in the second silicon layer by using the metal elements of the metal silicide oxide layer as a catalyst.