INDIUM TARGET AND MANUFACTURING METHOD THEREOF

摘要

Provided are an indium target in which the deposition rate from the start to the end of sputtering, as well as the discharge voltage and other sputtering properties remain stable; and a method for producing the target. This indium target has a columnar crystal structure extending from one surface of the target toward the other surface in the thickness direction of the target, the volume content of the columnar crystal structure constituting 90 to 100% of the target.