发明名称 |
METHOD FOR FABRICATING MOS TRANSISTOR |
摘要 |
A method of fabricating a MOS transistor includes the steps of: providing a substrate; forming a gate structure on the substrate; forming a first spacer on the sidewall of the gate structure and forming at least a recess within the substrate next to the first spacer; performing an oxygen-containing process to form an oxygen-containing layer on the surface of the recess; performing a cleaning process to remove the oxygen-containing layer; performing an epitaxial process to form an epitaxial layer in the recess; and removing the first spacer.
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申请公布号 |
US2012264267(A1) |
申请公布日期 |
2012.10.18 |
申请号 |
US201113084564 |
申请日期 |
2011.04.12 |
申请人 |
LU TSUO-WEN;HUANG GIN-CHEN;WANG SHAO-WEI;WANG YU-REN;CHENG YA-CHI |
发明人 |
LU TSUO-WEN;HUANG GIN-CHEN;WANG SHAO-WEI;WANG YU-REN;CHENG YA-CHI |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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